*For representation only.
⚙
Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 2.5V |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 200mA, 2.5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 0.7 nC @ 2.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 44 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 150mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-723 |
| Package / Case | SOT-723 |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 10000 |
6,545
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 112 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
ℹ
Product Overview
XP2N1K2EN1 is a mosfets manufactured by YAGEO XSemi. This component is defined by a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 20 V, a current, continuous drain (id) @ 25°C of 200mA (Ta), a drive voltage of 1.2V, 2.5V and a rds on (max) @ id, vgs of 1.2Ohm @ 200mA, 2.5V. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. You can source XP2N1K2EN1 through Simplytronix, with fast shipping and verified authenticity.
