*For representation only.
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Technical Specifications
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 33A |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Speed | Zero Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 250 µA @ 1200 V |
| Capacitance @ Vr, F | 754pF @ 0V, 1MHz |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 75 |
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Alternate / Replacement Parts
| Alternate Packaging | C4D10120E-TR |
| Suggested Replacement |
5,888
Units In Stock
📦 Tube
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- Global shipping
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Test report available upon request —
view sample report
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Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 289 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541100000 |
| CAHTS | 8541100090 |
| USHTS | 8541100080 |
| JPHTS | 8541400103 |
| TARIC | 8541100000 |
| BRHTS | 85414011 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Wolfspeed, the C4D10120E is classified as a sic schottky diodes. This component is defined by a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 1200 V, a current, average rectified of 33A, a voltage, forward (vf) (max) @ if of 1.8 V @ 10 A, a speed of Zero Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 289 Days from factory and ships with a full manufacturer datasheet available for download. Order C4D10120E from Simplytronix for authenticated stock and same-day order processing.
