*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 14A, 18V |
| Vgs(th) (Max) @ Id | 2.9V @ 2.8mA |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 18 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1381 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 185W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK-7L (TO-263 7L) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 800 |
10,903
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 125 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290000 |
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Product Overview
The MXPQ120A080SE-1GE3 from Vishay / Siliconix falls under the sic mosfets category. This component is defined by a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1200 V, a current, continuous drain (id) @ 25°C of 32A (Tc), a drive voltage of 15V, 18V and a rds on (max) @ id, vgs of 100mOhm @ 14A, 18V. This part has a typical lead time of 125 Days from factory. Order MXPQ120A080SE-1GE3 from Simplytronix for authenticated stock and same-day order processing.
