*For representation only.
⚙
Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 79mOhm @ 18A, 18V |
| Vgs(th) (Max) @ Id | 2.9V @ 3.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 18 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1699 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 221W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK-7L (TO-263 7L) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 800 |
11,174
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 125 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290000 |
ℹ
Product Overview
Vishay / Siliconix's MXPQ120A063SE-1GE3 is a widely used sic mosfets in electronic designs. Key specifications include a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1200 V, a current, continuous drain (id) @ 25°C of 41A (Tc), a drive voltage of 15V, 18V and a rds on (max) @ id, vgs of 79mOhm @ 18A, 18V. This part has a typical lead time of 125 Days from factory. Simplytronix carries MXPQ120A063SE-1GE3 in stock, backed by a genuine parts guarantee and quick dispatch.
