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VS-4C30EP12L-M3 Vishay Semiconductors
*For representation only.

VS-4C30EP12L-M3

SiC Schottky Diodes SicG4TO-2472L
Technical Specifications
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 30A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 30 A
Speed Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 160 µA @ 1.2 kV
Capacitance @ Vr, F 1821pF @ 1V, 1MHz
Grade -
Qualification -
Mounting Type Through Hole
Package / Case TO-247-2
Supplier Device Package TO-247AD
Operating Temperature - Junction -55°C ~ 175°C
📦 Product Attributes
Packaging Tube
Standard Pack Qty 500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,389
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 84 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541100090
USHTS 8541100080
TARIC 8541100000
ECCN EAR99
Product Overview

The VS-4C30EP12L-M3 from Vishay Semiconductors falls under the sic schottky diodes category. Key specifications include a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 1200 V, a current, average rectified of 30A, a voltage, forward (vf) (max) @ if of 1.5 V @ 30 A, a speed of Zero Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 84 Days from factory. Simplytronix stocks VS-4C30EP12L-M3 for same-day shipping with genuine parts guaranteed.

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