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VS-3C08ET07T-M3 Vishay Semiconductors
*For representation only.

VS-3C08ET07T-M3

SiC Schottky Diodes RECT 650V 8A RDL POWER SIC
Technical Specifications
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 8A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 8 A
Speed Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 45 µA @ 650 V
Capacitance @ Vr, F 340pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package TO-220AC
Operating Temperature - Junction -55°C ~ 175°C
📦 Product Attributes
Packaging Tube
Standard Pack Qty 50
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,682
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 66 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
TARIC 8541100000
CAHTS 8541100090
USHTS 8541100080
ECCN EAR99
Product Overview

VS-3C08ET07T-M3 is a sic schottky diodes manufactured by Vishay Semiconductors. Key specifications include a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 650 V, a current, average rectified of 8A, a voltage, forward (vf) (max) @ if of 1.5 V @ 8 A, a speed of Zero Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 66 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks VS-3C08ET07T-M3 for same-day shipping with genuine parts guaranteed.

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