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VS-4C30CP07L-M3 Vishay Semiconductors
*For representation only.

VS-4C30CP07L-M3

SiC Schottky Diodes SicG4TO-2473L
Technical Specifications
Diode Configuration 1 Pair Common Cathode
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) (per Diode) 16A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 16 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 80 µA @ 650 V
Operating Temperature - Junction -55°C ~ 175°C
Grade -
Qualification -
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AD
📦 Product Attributes
Packaging Tube
Standard Pack Qty 500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,897
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 84 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541100090
USHTS 8541100080
TARIC 8541100000
ECCN EAR99
Product Overview

VS-4C30CP07L-M3 is a sic schottky diodes manufactured by Vishay Semiconductors. This component is defined by a diode configuration of 1 Pair Common Cathode, a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 650 V, a current, average rectified (io) of 16A, a voltage, forward (vf) (max) @ if of 1.5 V @ 16 A and a speed of No Recovery Time > 500mA (Io). This part has a typical lead time of 84 Days from factory. You can source VS-4C30CP07L-M3 through Simplytronix, with fast shipping and verified authenticity.

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