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VS-3C20CP07L-M3 Vishay Semiconductors
*For representation only.

VS-3C20CP07L-M3

SiC Schottky Diodes RECT 650V 20A RDL POWER SIC
Technical Specifications
Diode Configuration 1 Pair Common Cathode
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) (per Diode) 10A (DC)
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 10 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 55 µA @ 650 V
Operating Temperature - Junction -55°C ~ 175°C
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AD
📦 Product Attributes
Packaging Tube
Standard Pack Qty 25
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,671
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 26 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
TARIC 8541100000
CAHTS 8541100090
USHTS 8541100080
ECCN EAR99
Product Overview

Manufactured by Vishay Semiconductors, the VS-3C20CP07L-M3 is classified as a sic schottky diodes. Key specifications include a diode configuration of 1 Pair Common Cathode, a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 650 V, a current, average rectified (io) of 10A (DC), a voltage, forward (vf) (max) @ if of 1.5 V @ 10 A and a speed of No Recovery Time > 500mA (Io). This part has a typical lead time of 26 Days from factory. Order VS-3C20CP07L-M3 from Simplytronix for authenticated stock and same-day order processing.

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