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VS-3C04EV07T-M3/I Vishay Semiconductors
*For representation only.

VS-3C04EV07T-M3/I

SiC Schottky Diodes SIC-G3-SLIMDPAK 2L
Technical Specifications
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 4A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 4 A
Speed Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 25 µA @ 650 V
Capacitance @ Vr, F 175pF @ 1V, 1MHz
Mounting Type Surface Mount
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package SlimDPAK
Operating Temperature - Junction -55°C ~ 175°C
📦 Product Attributes
Packaging Reel
Standard Pack Qty 4500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,923
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541100000
TARIC 8541100000
CAHTS 8541100090
USHTS 8541100080
ECCN EAR99
Product Overview

Manufactured by Vishay Semiconductors, the VS-3C04EV07T-M3/I is classified as a sic schottky diodes. Notable characteristics of this part include a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 650 V, a current, average rectified of 4A, a voltage, forward (vf) (max) @ if of 1.5 V @ 4 A, a speed of Zero Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 0 Days from factory. Simplytronix stocks VS-3C04EV07T-M3/I for same-day shipping with genuine parts guaranteed.

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