*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 26A, 18V |
| Vgs(th) (Max) @ Id | 2.8V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 18 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2483 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 268W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK-7L (TO-263 7L) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Product Attributes
| Packaging | |
| Standard Pack Qty | 800 |
4,914
Units In Stock
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- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 168 Days (from factory) |
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Documentation
Datasheet not available
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Product Overview
The MXPQ120A045SE-1GE3 from Vishay Semiconductors falls under the sic mosfets category. Key specifications include a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1200 V, a current, continuous drain (id) @ 25°C of 52A (Tc), a drive voltage of 15V, 18V and a rds on (max) @ id, vgs of 56mOhm @ 26A, 18V. This part has a typical lead time of 168 Days from factory. Simplytronix carries MXPQ120A045SE-1GE3 in stock, backed by a genuine parts guarantee and quick dispatch.
