*For representation only.
⚙
Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 20V |
| Vgs(th) (Max) @ Id | 2.69V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 47.3 nC @ 18 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1156 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 139W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3L |
| Package / Case | TO-247-3 |
📦
Product Attributes
| Packaging | |
| Standard Pack Qty | 600 |
4,093
Units In Stock
📦
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 0 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
Vishay Semiconductors's MXP120A080FW-GE3 is a widely used sic mosfets in electronic designs. This component is defined by a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1200 V, a current, continuous drain (id) @ 25°C of 29A (Tc), a drive voltage of 18V, 20V and a rds on (max) @ id, vgs of 100mOhm @ 20A, 20V. This part has a typical lead time of 0 Days from factory. You can source MXP120A080FW-GE3 through Simplytronix, with fast shipping and verified authenticity.
