*For representation only.
Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.6mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 22.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1344pF @ 25V |
| Power - Max | 55.6W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-PDFNU (5x6) |
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2500 |
4,843
In Stock
Packaging: Reel
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✔ Genuine Parts
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✔ Genuine Parts
Test Report Available Upon Request
click here to view sample report
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Reported Lead Time | 112 Days (from factory) |
Documentation
Not Available
Compliance & Export Information
| Country | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
Product Overview
TSM076NH04LDCR RLG by Taiwan Semiconductor is a mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.
Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.
