*For representation only.
SCT018H65G3-7
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
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Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 30A, 18V |
| Vgs(th) (Max) @ Id | 4.2V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 79.4 nC @ 18 V |
| Vgs (Max) | +18V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 2124 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 385W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | H2PAK-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1000 |
3,022
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 147 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
STMicroelectronics's SCT018H65G3-7 is a widely used sic mosfets in electronic designs. Key specifications include a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 650 V, a current, continuous drain (id) @ 25°C of 55A (Tc), a drive voltage of 15V, 18V and a rds on (max) @ id, vgs of 27mOhm @ 30A, 18V. This part has a typical lead time of 147 Days from factory. Simplytronix stocks SCT018H65G3-7 for same-day shipping with genuine parts guaranteed.
