*For representation only.
SCT040H65G3AG
STMicroelectronics
Active
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
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Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 20A, 18V |
| Vgs(th) (Max) @ Id | 4.2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 39.5 nC @ 18 V |
| Vgs (Max) | +18V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 400 V |
| Power Dissipation (Max) | 221W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | H2PAK-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1000 |
10,387
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 175 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
The SCT040H65G3AG from STMicroelectronics falls under the sic mosfets category. It features a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 650 V, a current, continuous drain (id) @ 25°C of 30A (Tc), a drive voltage of 15V, 18V and a rds on (max) @ id, vgs of 55mOhm @ 20A, 18V. This part has a typical lead time of 175 Days from factory. You can source SCT040H65G3AG through Simplytronix, with fast shipping and verified authenticity.
