| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 41A |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 15 A |
| Speed | Zero Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 40 µA @ 1200 V |
| Capacitance @ Vr, F | 1059pF @ 0V, 1MHz |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-2 |
| Supplier Device Package | TO-247-2L |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Packaging | Tube |
| Standard Pack Qty | 30 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541100000 |
| ECCN | EAR99 |
Manufactured by Sanan Semiconductor, the SDS120J015H2-ISATH is classified as a sic mosfets. This component is defined by a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 1200 V, a current, average rectified of 41A, a voltage, forward (vf) (max) @ if of 1.8 V @ 15 A, a speed of Zero Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 0 Days from factory. You can source SDS120J015H2-ISATH through Simplytronix, with fast shipping and verified authenticity.
