| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 30A |
| Voltage - Forward (Vf) (Max) @ If | 1.45 V @ 10 A |
| Speed | Zero Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 80 µA @ 650 V |
| Capacitance @ Vr, F | 629pF @ 0V, 1MHz |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220-2L |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Packaging | Tube |
| Standard Pack Qty | 50 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541100000 |
| ECCN | EAR99 |
Sanan Semiconductor's SDS065J010C4-CSATH is a widely used sic mosfets in electronic designs. This component is defined by a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 650 V, a current, average rectified of 30A, a voltage, forward (vf) (max) @ if of 1.45 V @ 10 A, a speed of Zero Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 0 Days from factory. Simplytronix stocks SDS065J010C4-CSATH for same-day shipping with genuine parts guaranteed.
