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SCT4045DW7TL

SiC MOSFETs TO263 750V 31A N-CH SIC
Technical Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 750 V
Current - Continuous Drain (Id) @ 25°C 31A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 59mOhm @ 17A, 18V
Vgs(th) (Max) @ Id 4.8V @ 8.89mA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 18 V
Vgs (Max) +21V, -4V
Input Capacitance (Ciss) (Max) @ Vds 1460 pF @ 500 V
FET Feature -
Power Dissipation (Max) 93W
Operating Temperature 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-263-7L
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Product Attributes
Packaging Reel
Standard Pack Qty1000
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,815
In Stock
Packaging: Reel
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Test Report Available Upon Request click here to view sample report
Key Specifications
CategorySiC MOSFETs
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 189 Days (from factory)
Documentation
Not Available
Compliance & Export Information
Country Code
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
Product Overview

SCT4045DW7TL by ROHM Semiconductor is a sic mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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