| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 39A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 18A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 22.4 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1520 pF @ 15 V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 20W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-HSMT (3.2x3) |
| Package / Case | 8-PowerVDFN |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 112 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
RQ3E180GNTB is a mosfets manufactured by ROHM Semiconductor. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 30 V and a current, continuous drain (id) @ 25°C of 18A (Ta), 39A (Tc). This part has a typical lead time of 112 Days from factory. Simplytronix stocks RQ3E180GNTB for same-day shipping with genuine parts guaranteed.