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RQ3E180GNTB ROHM Semiconductor
*For representation only.

RQ3E180GNTB

MOSFETs 4.5V Drive Nch MOSFET
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.3mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 22.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1520 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2W (Ta), 20W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-HSMT (3.2x3)
Package / Case 8-PowerVDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,022
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 112 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

RQ3E180GNTB is a mosfets manufactured by ROHM Semiconductor. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 30 V and a current, continuous drain (id) @ 25°C of 18A (Ta), 39A (Tc). This part has a typical lead time of 112 Days from factory. Simplytronix stocks RQ3E180GNTB for same-day shipping with genuine parts guaranteed.

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