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R6520KNXC7G ROHM Semiconductor
*For representation only.

R6520KNXC7G

MOSFETs TO220 650V 20A N-CH MOSFET
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 205mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1550 pF @ 25 V
Power Dissipation (Max) 68W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FM
Package / Case TO-220-3 Full Pack
📦 Product Attributes
Packaging Tube
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,451
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 126 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
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