*For representation only.
SCT3105KW7TL
ROHM Semiconductor
Active
SiC MOSFETs Transistor SiC MOSFET 1200V 105m 3rd Gen TO-263-7L
Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 137mOhm @ 7.6A, 18V |
| Vgs(th) (Max) @ Id | 5.6V @ 3.81mA |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 18 V |
| Vgs (Max) | +22V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 574 pF @ 800 V |
| Power Dissipation (Max) | 125W |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1000 |
8,580
In Stock
Packaging: Reel
✔ 24h Response
✔ Global Shipping
✔ Genuine Parts
✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request
click here to view sample report
Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Reported Lead Time | 189 Days (from factory) |
Documentation
Not Available
Compliance & Export Information
| Country | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
Product Overview
SCT3105KW7TL by ROHM Semiconductor is a sic mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.
Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.
