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T1G4020036-FS Qorvo
*For representation only.

T1G4020036-FS

Qorvo Active
GaN FETs DC-3.5GHz GaN 2X 120W 36Volt
Technical Specifications
Technology HEMT
Configuration N-Channel
Frequency 3.5GHz
Gain 18.1dB
Voltage - Test 55 V
Current Rating (Amps) -
Noise Figure -
Current - Test 520 mA
Power - Output 200W
Voltage - Rated 145 V
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case NI-650
Supplier Device Package NI-650
📦 Product Attributes
Packaging Tray
Standard Pack Qty 25
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,880
Units In Stock
📦 Tray
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle
Lead Time 140 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8542319000
CAHTS 8542330000
USHTS 8542390090
JPHTS 8542330996
KRHTS 8532331000
MXHTS 8542330201
ECCN 3A001.b.3.a.3
Product Overview

T1G4020036-FS is a gan fets manufactured by Qorvo. This component is defined by a technology of HEMT, a configuration of N-Channel, a frequency of 3.5GHz, a gain of 18.1dB, a voltage, test of 55 V and a current rating of -. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. You can source T1G4020036-FS through Simplytronix, with fast shipping and verified authenticity.

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