| Technology | HEMT |
| Configuration | N-Channel |
| Frequency | 3.5GHz |
| Gain | 18.1dB |
| Voltage - Test | 55 V |
| Current Rating (Amps) | - |
| Noise Figure | - |
| Current - Test | 520 mA |
| Power - Output | 200W |
| Voltage - Rated | 145 V |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | NI-650 |
| Supplier Device Package | NI-650 |
| Packaging | Tray |
| Standard Pack Qty | 25 |
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 140 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8542319000 |
| CAHTS | 8542330000 |
| USHTS | 8542390090 |
| JPHTS | 8542330996 |
| KRHTS | 8532331000 |
| MXHTS | 8542330201 |
| ECCN | 3A001.b.3.a.3 |
T1G4020036-FS is a gan fets manufactured by Qorvo. This component is defined by a technology of HEMT, a configuration of N-Channel, a frequency of 3.5GHz, a gain of 18.1dB, a voltage, test of 55 V and a current rating of -. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. You can source T1G4020036-FS through Simplytronix, with fast shipping and verified authenticity.