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T2G6000528-Q3

Qorvo Active
GaN FETs DC-6GHz 28V P3dB 10W @3.3GHz
Technical Specifications
GaN FETs DC 6GHz 28V P3dB 10W @3
Product Attributes
Packaging Tray
Standard Pack Qty100
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,434
In Stock
Packaging: Tray
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✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryGaN FETs
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 140 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CNHTS 8541290000
CAHTS 8542390000
USHTS 8541290065
TARIC 8542399000
MXHTS 8542399901
ECCN EAR99
Product Overview

T2G6000528-Q3 by Qorvo is a gan fets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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