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T1G4020036-FL

Qorvo Active
GaN FETs DC-3.5GHz GaN 2X 120W 36Volt
Technical Specifications
Technology HEMT
Configuration N-Channel
Frequency 3.5GHz
Gain 18.1dB
Current Rating (Amps) 24A
Noise Figure -
Power - Output 400W
Voltage - Rated 50 V
Grade -
Qualification -
Mounting Type Chassis Mount
Package / Case NI-650
Supplier Device Package NI-650
📦 Product Attributes
Packaging Tray
Standard Pack Qty 25
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,903
Units In Stock
📦 Tray
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  • Global shipping
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle
Lead Time 154 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8542319090
CAHTS 8542330000
USHTS 8542390090
JPHTS 8542330996
KRHTS 8532331000
MXHTS 8542330201
ECCN 3A001.b.3.a.3
Product Overview

Manufactured by Qorvo, the T1G4020036-FL is classified as a gan fets. Key specifications include a technology of HEMT, a configuration of N-Channel, a frequency of 3.5GHz, a gain of 18.1dB, a current rating of 24A and a noise figure of -. This part has a typical lead time of 154 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries T1G4020036-FL in stock, backed by a genuine parts guarantee and quick dispatch.

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