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QPD1013SR Qorvo
*For representation only.

QPD1013SR

Qorvo Active
GaN FETs DC-2.7GHz 150W PAE 64.8%
Technical Specifications
Technology HEMT
Configuration N-Channel
Frequency 2.7GHz
Gain 21.8dB
Voltage - Test 65 V
Current Rating (Amps) -
Noise Figure -
Current - Test 240 mA
Power - Output 150W
Voltage - Rated 225 V
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 6-VDFN Exposed Pad
Supplier Device Package 6-DFN (7.2x6.6)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 100
🔁 Alternate / Replacement Parts
Alternate Packaging QPD1013TR7
Suggested Replacement
12,737
Units In Stock
📦 Reel
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle
Lead Time 140 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8517620090
USHTS 8541290055
TARIC 8517620000
ECCN EAR99
Product Overview

Qorvo's QPD1013SR is a widely used gan fets in electronic designs. This component is defined by a technology of HEMT, a configuration of N-Channel, a frequency of 2.7GHz, a gain of 21.8dB, a voltage, test of 65 V and a current rating of -. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. Order QPD1013SR from Simplytronix for authenticated stock and same-day order processing.

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