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PJX138L_R1_00001

Panjit Active
MOSFETs 60V N-Channel Enhancement Mode MOSFET
Technical Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 160mA (Ta)
Rds On (Max) @ Id, Vgs 4.2Ohm @ 160mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 15pF @ 15V
Power - Max 223mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package SOT-563
Product Attributes
Packaging Reel
Standard Pack Qty4000
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,361
In Stock
Packaging: Reel
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Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryMOSFETs
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 126 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CNHTS 8541210000
USHTS 8541210095
TARIC 8541290000
ECCN EAR99
Product Overview

PJX138L_R1_00001 by Panjit is a mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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