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UJ3N065025K3S

onsemi Active
JFETs 650V/25MOSICJFETG3TO2
Technical Specifications
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) 650 V
Drain to Source Voltage (Vdss) 650 V
Current Drain (Id) - Max 85 A
Input Capacitance (Ciss) (Max) @ Vds 2360pF @ 100V
Resistance - RDS(On) 33 mOhms
Power - Max 441 W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Product Attributes
Packaging Tube
Standard Pack Qty600
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,482
In Stock
Packaging: Tube
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Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryJFETs
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 217 Days (from factory)
Documentation
Not Available
Compliance & Export Information
Country Code
CNHTS 8541290000
USHTS 8541290055
TARIC 8541210000
ECCN EAR99
Product Overview

UJ3N065025K3S by onsemi is a jfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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