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MMBF4391LT1G

onsemi Active
JFETs 30V 10mA
Technical Specifications
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) 30 V
Drain to Source Voltage (Vdss) 30 V
Current - Drain (Idss) @ Vds (Vgs=0) 50 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id 4 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds 14pF @ 15V
Resistance - RDS(On) 30 Ohms
Power - Max 225 mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Product Attributes
Packaging Reel
Standard Pack Qty3000
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,826
In Stock
Packaging: Reel
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Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryJFETs
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 294 Days (from factory)
Documentation
Not Available
Compliance & Export Information
Country Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Product Overview

MMBF4391LT1G by onsemi is a jfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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