*For representation only.
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Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 4 N-Channel (Full Bridge) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 44mOhm @ 15A, 18V |
| Vgs(th) (Max) @ Id | 4V @ 7.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 58nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 1215pF @ 400V |
| Power - Max | 65.2W (Tj) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | 13-SSIP Exposed Pad, Formed Leads |
| Supplier Device Package | APM16 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty |
14,079
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | Factory Special Order |
| Lead Time | 154 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
NXVF6532M3TG01 is a sic mosfets manufactured by onsemi. Notable characteristics of this part include a technology of Silicon Carbide (SiC), a configuration of 4 N-Channel (Full Bridge), a drain to source voltage of 650V, a current, continuous drain (id) @ 25°C of 31A (Tc), a rds on (max) @ id, vgs of 44mOhm @ 15A, 18V and a vgs(th) (max) @ id of 4V @ 7.5mA. This part has a typical lead time of 154 Days from factory. You can source NXVF6532M3TG01 through Simplytronix, with fast shipping and verified authenticity.
