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NXH100B120H3Q0PG

onsemi Active
Discrete Semiconductor Modules PIM 60-80KW Q0BOOST-L57 1200V 100A (PRESS-FIT PIN)
Technical Specifications
IGBT Type Trench Field Stop
Configuration 2 Independent
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 61 A
Power - Max 186 W
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 50A
Current - Collector Cutoff (Max) 200 µA
Input Capacitance (Cies) @ Vce 9.075 nF @ 20 V
Input Standard
NTC Thermistor No
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package 22-PIM (55x32.5)
📦 Product Attributes
Packaging Tray
Standard Pack Qty 24
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,714
Units In Stock
📦 Tray
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🔑 Key Specifications
Category Discrete Semiconductor Modules
RoHS
Lifecycle
Lead Time 105 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541590000
USHTS 8541590080
JPHTS 854159000
KRHTS 8541599000
TARIC 8541590000
MXHTS 8541500100
BRHTS 85415020
ECCN EAR99
Product Overview

Manufactured by onsemi, the NXH100B120H3Q0PG is classified as a discrete semiconductor modules. This component is defined by a IGBT type of Trench Field Stop, a configuration of 2 Independent, a voltage, collector emitter breakdown of 1200 V, a current, collector (ic) of 61 A, a power, max of 186 W and a vce(on) (max) @ vge, ic of 2.3V @ 15V, 50A. This part has a typical lead time of 105 Days from factory. Order NXH100B120H3Q0PG from Simplytronix for authenticated stock and same-day order processing.

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