*For representation only.
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Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 400A (Tj) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 400A, 20V |
| Vgs(th) (Max) @ Id | 3.2V @ 150mA |
| Gate Charge (Qg) (Max) @ Vgs | 1750nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 31700pF @ 800V |
| Power - Max | 1000W (Tj) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Package / Case | 15-PowerDIP Module (2.441", 62.00mm) |
| Supplier Device Package | AHPM15-CDI |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 6 |
5,181
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Discrete Semiconductor Modules |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 154 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290095 |
| ECCN | EAR99 |
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Product Overview
NVVR26A120M1WSS is a discrete semiconductor modules manufactured by onsemi. This component is defined by a technology of Silicon Carbide (SiC), a configuration of 2 N-Channel (Half Bridge), a FET feature of -, a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of 400A (Tj) and a rds on (max) @ id, vgs of 2.6mOhm @ 400A, 20V. This part has a typical lead time of 154 Days from factory. Order NVVR26A120M1WSS from Simplytronix for authenticated stock and same-day order processing.
