*For representation only.
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Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 116mOhm @ 20A, 20V |
| Vgs(th) (Max) @ Id | 4.3V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 56nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1154pF @ 800V |
| Power - Max | 82W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Package / Case | 32-PowerDIP Module (1.449", 36.80mm) |
| Supplier Device Package | APM32 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 10 |
8,966
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | New at Mouser |
| Lead Time | 112 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
Manufactured by onsemi, the NVXK2VR80WDT2 is classified as a mosfet modules. This component is defined by a technology of Silicon Carbide (SiC), a configuration of 6 N-Channel (3-Phase Bridge), a FET feature of -, a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of 20A (Tc) and a rds on (max) @ id, vgs of 116mOhm @ 20A, 20V. This part has a typical lead time of 112 Days from factory. You can source NVXK2VR80WDT2 through Simplytronix, with fast shipping and verified authenticity.
