*For representation only.
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Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25°C | 620A (Tj) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 620A, 18V |
| Vgs(th) (Max) @ Id | 4.3V @ 200mA |
| Gate Charge (Qg) (Max) @ Vgs | 2400nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 45000pF @ 400V |
| Power - Max | 1000W (Tj) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | SSDC39 |
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Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 4 |
11,500
Units In Stock
📦 Tray
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 140 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8542390060 |
| ECCN | EAR99 |
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Product Overview
NVXR17S90M2SPC is a mosfet modules manufactured by onsemi. This component is defined by a technology of Silicon Carbide (SiC), a configuration of 6 N-Channel (3-Phase Bridge), a FET feature of -, a drain to source voltage of 900V, a current, continuous drain (id) @ 25°C of 620A (Tj) and a rds on (max) @ id, vgs of 2.1mOhm @ 620A, 18V. This part has a typical lead time of 140 Days from factory. You can source NVXR17S90M2SPC through Simplytronix, with fast shipping and verified authenticity.
