*For representation only.
⚙
Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 35A, 20V |
| Vgs(th) (Max) @ Id | 4.3V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 20 V |
| Vgs (Max) | +25V, -15V |
| Input Capacitance (Ciss) (Max) @ Vds | 1762 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 319W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4L |
| Package / Case | TO-247-4 |
📦
Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 30 |
9,364
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 308 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
ℹ
Product Overview
NVH4L040N120SC1 is a sic mosfets manufactured by onsemi. Notable characteristics of this part include a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1200 V, a current, continuous drain (id) @ 25°C of 58A (Tc), a drive voltage of 20V and a rds on (max) @ id, vgs of 56mOhm @ 35A, 20V. This part has a typical lead time of 308 Days from factory. Simplytronix carries NVH4L040N120SC1 in stock, backed by a genuine parts guarantee and quick dispatch.
