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NTK3134NT3G

onsemi Active
MOSFETs Small Signal MOSFET 20V 890 mA 350 mOhm Single N-Channel with ESD Protection
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 350mOhm @ 890mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 120 pF @ 16 V
Power Dissipation (Max) 310mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-723
Package / Case SOT-723
Product Attributes
Packaging Reel
Standard Pack Qty40000
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,721
In Stock
Packaging: Reel
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Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryMOSFETs
RoHSRoHS Compliant
LifecycleNew Product
Reported Lead Time 364 Days (from factory)
Documentation
Not Available
Compliance & Export Information
Country Code
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
Product Overview

NTK3134NT3G by onsemi is a mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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