Similar Products
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | - |
| Power - Max | 500mW |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SOT-563 |
| Packaging | Reel |
| Standard Pack Qty | 4000 |
| Category | Digital Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 252 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541100000 |
| CAHTS | 8541100090 |
| USHTS | 8541100080 |
| JPHTS | 854110090 |
| KRHTS | 8541109000 |
| TARIC | 8541100000 |
| MXHTS | 8541100101 |
| ECCN | EAR99 |
Manufactured by onsemi, the NSVBC123JPDXV6T1G is classified as a digital transistors. Key specifications include a transistor type of 1 NPN, 1 PNP - Pre-Biased (Dual), a current, collector (ic) of 100mA, a voltage, collector emitter breakdown of 50V, a resistor, base of 2.2kOhms, a resistor, emitter base of 47kOhms and a DC current gain (hfe) (min) @ ic, vce of 80 @ 5mA, 10V. This part has a typical lead time of 252 Days from factory. You can source NSVBC123JPDXV6T1G through Simplytronix, with fast shipping and verified authenticity.
