*For representation only.
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Technical Specifications
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 100kOhms |
| Resistor - Emitter Base (R2) | 100kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | - |
| Power - Max | 187mW |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SOT-563 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 4000 |
10,967
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Digital Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 364 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
ℹ
Product Overview
The NSVBC115EPDXV6T1G from onsemi falls under the digital transistors category. This component is defined by a transistor type of 1 NPN, 1 PNP - Pre-Biased, a current, collector (ic) of 100mA, a voltage, collector emitter breakdown of 50V, a resistor, base of 100kOhms, a resistor, emitter base of 100kOhms and a DC current gain (hfe) (min) @ ic, vce of 80 @ 5mA, 10V. This part has a typical lead time of 364 Days from factory. Order NSVBC115EPDXV6T1G from Simplytronix for authenticated stock and same-day order processing.
