*For representation only.
Technical Specifications
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 250 V |
| Current - Average Rectified (Io) | 225mA |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 200 mA |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Current - Reverse Leakage @ Vr | 100 µA @ 200 V |
| Capacitance @ Vr, F | 5pF @ 0V, 1MHz |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Operating Temperature - Junction | -55°C ~ 150°C |
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
4,803
In Stock
Packaging: Reel
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Test Report Available Upon Request
click here to view sample report
Key Specifications
| Category | Small Signal Switching Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Reported Lead Time | 287 Days (from factory) |
Documentation
Not Available
Compliance & Export Information
| Country | Code |
|---|---|
| CNHTS | 8541590000 |
| CAHTS | 8541100090 |
| USHTS | 8541100070 |
| KRHTS | 8541109000 |
| TARIC | 8541100000 |
| MXHTS | 8541100101 |
| ECCN | EAR99 |
Product Overview
NSVBAS21SLT1G by onsemi is a small signal switching diodes designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.
Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.
