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NSVBAS21TMR6T1G

onsemi Active
Small Signal Switching Diodes TRIPLE HIGH VTG SWITCH
Technical Specifications
Diode Configuration 3 Independent
Technology Standard
Voltage - DC Reverse (Vr) (Max) 250 V
Current - Average Rectified (Io) (per Diode) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V
Operating Temperature - Junction -55°C ~ 150°C
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Supplier Device Package SC-74
Product Attributes
Packaging Reel
Standard Pack Qty3000
Alternate / Replacement Parts
Alternate Packaging NSVBAS21TMR6T2G
Suggested Replacement
7,150
In Stock
Packaging: Reel
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Test Report Available Upon Request click here to view sample report
Key Specifications
CategorySmall Signal Switching Diodes
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 301 Days (from factory)
Documentation
Not Available
Compliance & Export Information
Country Code
CNHTS 8541590000
CAHTS 8541100090
USHTS 8541100070
JPHTS 8541210101
KRHTS 8541109000
TARIC 8541100000
MXHTS 85412101
ECCN EAR99
Product Overview

NSVBAS21TMR6T1G by onsemi is a small signal switching diodes designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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