Similar Products
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 2.2kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | - |
| Power - Max | 500mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SOT-563 |
| Packaging | Reel |
| Standard Pack Qty | 4000 |
| Category | Digital Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 364 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| KRHTS | 8541299000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
The NSBC123EPDXV6T1G from onsemi falls under the digital transistors category. This component is defined by a transistor type of 1 NPN, 1 PNP - Pre-Biased (Dual), a current, collector (ic) of 100mA, a voltage, collector emitter breakdown of 50V, a resistor, base of 2.2kOhms, a resistor, emitter base of 2.2kOhms and a DC current gain (hfe) (min) @ ic, vce of 8 @ 5mA, 10V. This part has a typical lead time of 364 Days from factory and ships with a full manufacturer datasheet available for download. You can source NSBC123EPDXV6T1G through Simplytronix, with fast shipping and verified authenticity.
