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DTC115TET1G

onsemi Active
Digital Transistors NPN DIGITAL TRANSISTOR
Technical Specifications
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistors Included R1 Only
Resistor - Base (R1) 100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 200 mW
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Supplier Device Package SC-75, SOT-416
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,891
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Digital Transistors
RoHS RoHS Compliant
Lifecycle
Lead Time 196 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8542399000
CAHTS 8541210000
USHTS 8541210075
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Product Overview

onsemi's DTC115TET1G is a widely used digital transistors in electronic designs. It features a transistor type of NPN - Pre-Biased, a current, collector (ic) of 100 mA, a voltage, collector emitter breakdown of 50 V, a resistors included of R1 Only, a resistor, base of 100 kOhms and a DC current gain (hfe) (min) @ ic, vce of 160 @ 5mA, 10V. This part has a typical lead time of 196 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries DTC115TET1G in stock, backed by a genuine parts guarantee and quick dispatch.

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