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BD681G onsemi
*For representation only.

BD681G

onsemi Active
Darlington Transistors 4A 100V Bipolar Power NPN
Technical Specifications
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 4 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max) 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A, 3V
Power - Max 40 W
Frequency - Transition -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Supplier Device Package TO-126
📦 Product Attributes
Packaging Bulk
Standard Pack Qty 500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
12,978
Units In Stock
📦 Bulk
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🔑 Key Specifications
Category Darlington Transistors
RoHS RoHS Compliant
Lifecycle
Lead Time 147 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

Manufactured by onsemi, the BD681G is classified as a darlington transistors. This component is defined by a transistor type of NPN - Darlington, a current, collector (ic) of 4 A, a voltage, collector emitter breakdown of 100 V, a vce saturation (max) @ ib, ic of 2.5V @ 30mA, 1.5A, a current, collector cutoff of 500µA and a DC current gain (hfe) (min) @ ic, vce of 750 @ 1.5A, 3V. This part has a typical lead time of 147 Days from factory. Simplytronix carries BD681G in stock, backed by a genuine parts guarantee and quick dispatch.

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