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MJ11028G onsemi
*For representation only.

MJ11028G

Darlington Transistors 50A 60V Bipolar Power NPN
Technical Specifications
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 50 A
Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 3.5V @ 500mA, 50A
Current - Collector Cutoff (Max) 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 25A, 5V
Power - Max 300 W
Frequency - Transition -
Operating Temperature -55°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-204AE
Supplier Device Package TO-204 (TO-3)
📦 Product Attributes
Packaging Tray
Standard Pack Qty 100
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,452
Units In Stock
📦 Tray
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🔑 Key Specifications
Category Darlington Transistors
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 56 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

onsemi's MJ11028G is a widely used darlington transistors in electronic designs. Key specifications include a transistor type of NPN - Darlington, a current, collector (ic) of 50 A, a voltage, collector emitter breakdown of 60 V, a vce saturation (max) @ ib, ic of 3.5V @ 500mA, 50A, a current, collector cutoff of 2mA and a DC current gain (hfe) (min) @ ic, vce of 1000 @ 25A, 5V. This part has a typical lead time of 56 Days from factory. Order MJ11028G from Simplytronix for authenticated stock and same-day order processing.

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