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BD679AS onsemi
*For representation only.

BD679AS

Darlington Transistors NPN Epitaxial Sil
Technical Specifications
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 4 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max) 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A, 3V
Power - Max 40 W
Frequency - Transition -
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Supplier Device Package TO-126-3
📦 Product Attributes
Packaging Bulk
Standard Pack Qty 2000
🔁 Alternate / Replacement Parts
Alternate Packaging BD679ASTU
Suggested Replacement
4,162
Units In Stock
📦 Bulk
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🔑 Key Specifications
Category Darlington Transistors
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 91 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

onsemi's BD679AS is a widely used darlington transistors in electronic designs. This component is defined by a transistor type of NPN - Darlington, a current, collector (ic) of 4 A, a voltage, collector emitter breakdown of 80 V, a vce saturation (max) @ ib, ic of 2.8V @ 40mA, 2A, a current, collector cutoff of 500µA and a DC current gain (hfe) (min) @ ic, vce of 750 @ 2A, 3V. This part has a typical lead time of 91 Days from factory. You can source BD679AS through Simplytronix, with fast shipping and verified authenticity.

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