*For representation only.
MGD3100BM58EKR2
NXP Semiconductors
Active
Galvanically Isolated Gate Drivers IGBT & SiC GDIC for xEV traction inverters
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Technical Specifications
| Driven Configuration | Half-Bridge |
| Channel Type | Single |
| Number of Drivers | 1 |
| Gate Type | IGBT, MOSFET (N-Channel) |
| Voltage - Supply | 5V |
| Logic Voltage - VIL, VIH | - |
| Current - Peak Output (Source, Sink) | 15A, 15A |
| Input Type | - |
| Rise / Fall Time (Typ) | - |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Grade | Automotive |
| Qualification | AEC-Q100 |
| Mounting Type | Surface Mount |
| Package / Case | 32-BSSOP (0.295", 7.50mm Width) |
| Supplier Device Package | 32-SOIC |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1000 |
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Alternate / Replacement Parts
| Alternate Packaging | MGD3100BM58EK |
| Suggested Replacement |
11,160
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Galvanically Isolated Gate Drivers |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 26 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8542390070 |
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Product Overview
MGD3100BM58EKR2 is a galvanically isolated gate drivers manufactured by NXP Semiconductors. Notable characteristics of this part include a driven configuration of Half-Bridge, a channel type of Single, a number of drivers of 1, a gate type of IGBT, MOSFET (N-Channel), a voltage, supply of 5V and a logic voltage, VIL, VIH of -. This part has a typical lead time of 26 Days from factory and ships with a full manufacturer datasheet available for download. You can source MGD3100BM58EKR2 through Simplytronix, with fast shipping and verified authenticity.
