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MGD3100BM58EK NXP Semiconductors
*For representation only.

MGD3100BM58EK

Galvanically Isolated Gate Drivers IGBT & SiC GDIC for xEV traction inverters
Technical Specifications
Driven Configuration Half-Bridge
Channel Type Single
Number of Drivers 1
Gate Type IGBT, MOSFET (N-Channel)
Voltage - Supply 5V
Current - Peak Output (Source, Sink) 15A, 15A
Operating Temperature -40°C ~ 125°C (TA)
Grade Automotive
Qualification AEC-Q100
Mounting Type Surface Mount
Package / Case 32-BSSOP (0.295", 7.50mm Width)
Supplier Device Package 32-SOIC
📦 Product Attributes
Packaging Tube
Standard Pack Qty 42
🔁 Alternate / Replacement Parts
Alternate Packaging MGD3100BM58EKR2
Suggested Replacement
4,948
Units In Stock
📦 Tube
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🔑 Key Specifications
Category Galvanically Isolated Gate Drivers
RoHS RoHS Compliant
Lifecycle
Lead Time 365 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
USHTS 8542390090
MXHTS 8542399999
ECCN EAR99
Product Overview

MGD3100BM58EK is a galvanically isolated gate drivers manufactured by NXP Semiconductors. This component is defined by a driven configuration of Half-Bridge, a channel type of Single, a number of drivers of 1, a gate type of IGBT, MOSFET (N-Channel), a voltage, supply of 5V and a current, peak output of 15A, 15A. This part has a typical lead time of 365 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries MGD3100BM58EK in stock, backed by a genuine parts guarantee and quick dispatch.

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