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MC33GD3100B3EKR2 NXP Semiconductors
*For representation only.

MC33GD3100B3EKR2

Galvanically Isolated Gate Drivers IGBT & SiC GDIC for xEV traction inverters
Technical Specifications
Driven Configuration Half-Bridge
Channel Type Single
Number of Drivers 1
Gate Type IGBT, MOSFET (N-Channel)
Voltage - Supply 3.3V
Logic Voltage - VIL, VIH -
Current - Peak Output (Source, Sink) 15A, 15A
Input Type -
Rise / Fall Time (Typ) -
Operating Temperature -40°C ~ 125°C (TA)
Grade Automotive
Qualification AEC-Q100
Mounting Type Surface Mount
Package / Case 32-BSSOP (0.295", 7.50mm Width)
Supplier Device Package 32-SOIC
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging MC33GD3100B3EK
Suggested Replacement
14,280
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Galvanically Isolated Gate Drivers
RoHS RoHS Compliant
Lifecycle
Lead Time 16 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
USHTS 8542390070
Product Overview

The MC33GD3100B3EKR2 from NXP Semiconductors falls under the galvanically isolated gate drivers category. It features a driven configuration of Half-Bridge, a channel type of Single, a number of drivers of 1, a gate type of IGBT, MOSFET (N-Channel), a voltage, supply of 3.3V and a logic voltage, VIL, VIH of -. This part has a typical lead time of 16 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries MC33GD3100B3EKR2 in stock, backed by a genuine parts guarantee and quick dispatch.

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