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MC33GD3100B3EK NXP Semiconductors
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MC33GD3100B3EK

Galvanically Isolated Gate Drivers IGBT & SiC GDIC for xEV traction inverters
Technical Specifications
Driven Configuration Half-Bridge
Channel Type Single
Number of Drivers 1
Gate Type IGBT, MOSFET (N-Channel)
Voltage - Supply 3.3V
Logic Voltage - VIL, VIH -
Current - Peak Output (Source, Sink) 15A, 15A
Input Type -
Rise / Fall Time (Typ) -
Operating Temperature -40°C ~ 125°C (TA)
Grade Automotive
Qualification AEC-Q100
Mounting Type Surface Mount
Package / Case 32-BSSOP (0.295", 7.50mm Width)
Supplier Device Package 32-SOIC
📦 Product Attributes
Packaging Tube
Standard Pack Qty 42
🔁 Alternate / Replacement Parts
Alternate Packaging MC33GD3100B3EKR2
Suggested Replacement
3,799
Units In Stock
📦 Tube
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🔑 Key Specifications
Category Galvanically Isolated Gate Drivers
RoHS RoHS Compliant
Lifecycle
Lead Time 112 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8542399000
CAHTS 8542390000
USHTS 8542390090
MXHTS 8542399999
ECCN EAR99
Product Overview

NXP Semiconductors's MC33GD3100B3EK is a widely used galvanically isolated gate drivers in electronic designs. It features a driven configuration of Half-Bridge, a channel type of Single, a number of drivers of 1, a gate type of IGBT, MOSFET (N-Channel), a voltage, supply of 3.3V and a logic voltage, VIL, VIH of -. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. You can source MC33GD3100B3EK through Simplytronix, with fast shipping and verified authenticity.

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