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PSMN3R3-80YSFX Nexperia
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PSMN3R3-80YSFX

Nexperia Active
MOSFETs PSMN3R3-80YSF/SOT669/LFPAK
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 108 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6986 pF @ 40 V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package LFPAK56, Power-SO8
Package / Case SC-100, SOT-669
📦 Product Attributes
Packaging
Standard Pack Qty 1500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
12,536
Units In Stock
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 365 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

PSMN3R3-80YSFX is a mosfets manufactured by Nexperia. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 80 V and a current, continuous drain (id) @ 25°C of 160A (Tc). This part has a typical lead time of 365 Days from factory. Simplytronix stocks PSMN3R3-80YSFX for same-day shipping with genuine parts guaranteed.

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