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PSMN1R7-40YLBX Nexperia
*For representation only.

PSMN1R7-40YLBX

MOSFETs SOT669 N-CH 40V 200A
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.05V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 111 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8138 pF @ 20 V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 194W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package LFPAK56, Power-SO8
Package / Case SC-100, SOT-669
📦 Product Attributes
Packaging
Standard Pack Qty 1500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,009
Units In Stock
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 365 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

PSMN1R7-40YLBX is a mosfets manufactured by Nexperia. Key specifications include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 40 V, a current, continuous drain (id) @ 25°C of 200A (Tc), a drive voltage of 4.5V, 10V and a rds on (max) @ id, vgs of 1.8mOhm @ 25A, 10V. This part has a typical lead time of 365 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks PSMN1R7-40YLBX for same-day shipping with genuine parts guaranteed.

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