*For representation only.
⚙
Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 29.6nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 3637pF @ 25V |
| Power - Max | 68W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-1205, 8-LFPAK56 |
| Supplier Device Package | LFPAK56D |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1500 |
5,543
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 365 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
PSMN029-100HLX is a mosfets manufactured by Nexperia. Key specifications include a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of Logic Level Gate, a drain to source voltage of 100V, a current, continuous drain (id) @ 25°C of 30A (Ta) and a rds on (max) @ id, vgs of 27mOhm @ 5A, 10V. This part has a typical lead time of 365 Days from factory and ships with a full manufacturer datasheet available for download. Order PSMN029-100HLX from Simplytronix for authenticated stock and same-day order processing.
